US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on March 11 for "Open block-based read offset compensation in read operation of memory device" (Chinese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,379, issued on March 11, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Open block-based read offset compensation in read operation of memory device" was invented by Xiaojiang Guo (Wuhan, China), Jong Hoon Kang (Wuhan, China) and Youxin He (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Open block-based read offset compensation in read operation of memory device is disclosed. For example, a memory device includes an array of memory cells arranged in a plurality of blocks and a peripheral circuit coupled to the array of memory cells. The peripheral circuit is configured to determine that a block of the blocks is a...