US Patent Issued to Yangtze Memory Technologies on June 3 for "System and methods for modeling and simulating on-die capacitors" (Chinese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,321,676, issued on June 3, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"System and methods for modeling and simulating on-die capacitors" was invented by Peng Sun (Hubei, China) and Yuzhong Wang (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure is directed to methods and systems for analyzing integrated circuits. The method includes performing a first resistor capacitor (RC) extraction process on a power-receiving circuit and producing a first RC model. The method also includes scanning a netlist of a power distribution network, the power distribution network electrically connected to the power-r...