US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on June 3 for "Semiconductor device and manufacture method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,198, issued on June 3, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Semiconductor device and manufacture method thereof" was invented by Teng Huang (Wuhan, China), Ziqun Hua (Wuhan, China), Yanwei Shi (Wuhan, China) and Lan Yao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of fabricating the semiconductor device are provided. The method includes: forming a first bottom isolation layer and a second bottom isolation layer in a substrate, the thickness of the second bottom isolation layer being less than that of the first bottom isolation layer; and forming, on the a first activ...