US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on June 3 for "Memory device, programming method of memory device, and memory system" (Chinese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,449, issued on June 3, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Hubei, China).

"Memory device, programming method of memory device, and memory system" was invented by Jing Wei (Hubei, China) and Xiaojiang Guo (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes performing a programming operation on the memory cell using incremental step pulse programming. The programming operation includes applying one or more first voltage steps to the word line using a first step value to increase a threshold voltage of the memory cell toward a programming state. The programming operation also includes determining a quantity o...