US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on June 24 for "Memory device, operation method thereof, and memory system" (Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,339,769, issued on June 24, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, operation method thereof, and memory system" was invented by Bailjun Hu (Wuhan, China) and Guangchang Ye (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one aspect of the present disclosure, a memory device is provided. The memory device may include a memory cell array. The memory device may include a peripheral circuit coupled to the memory cell array. The peripheral circuit may be configured to receive a first instruction indicating to write dummy data at a specified location in the memory cell array. The periphera...