US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on June 17 for "Three-dimensional memory device having source-select-gate cut structures and methods for forming the same" (Chinese Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,181, issued on June 17, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory device having source-select-gate cut structures and methods for forming the same" was invented by Zhong Zhang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory device includes a memory stack including a memory block. The memory block includes a memory array structures and a staircase structure in a first lateral direction, and fingers in a second lateral direction perpendicular to the first lateral direction. The fingers include a first finger and a second finger. The 3D memory device also ...