US Patent Issued to Yangtze Memory Technologies on June 17 for "Structures and methods for fabricating staircase regions of a three-dimensional NAND memory device" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,399, issued on June 17, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Structures and methods for fabricating staircase regions of a three-dimensional NAND memory device" was invented by Xiongyu Wang (Wuhan, China), Yi Zhou (Wuhan, China), Li Zhang (Wuhan, China), XinSheng Wang (Wuhan, China), Hsing-An Lo (Wuhan, China), GaoSheng Zhang (Wuhan, China), YuPing Xia (Wuhan, China) and Fei Xie (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method for fabricating a semiconductor device, a stack of alternating insulating layers and sacrificial layers are formed over a substrate. A staircase having a plurality of st...