US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on June 10 for "Vertical memory devices and methods for operating the same" (Chinese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,592, issued on June 10, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Vertical memory devices and methods for operating the same" was invented by DongXue Zhao (Wuhan, China), Tao Yang (Wuhan, China), Yuancheng Yang (Wuhan, China), Lei Liu (Wuhan, China), Di Wang (Wuhan, China), Kun Zhang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for performing an erasing operation on a memory device is provided. The memory device includes a bottom select gate, a plate line above the bottom select gate, a word line above the pla...