US Patent Issued to Yangtze Memory Technologies on June 10 for "Method and apparatus for power saving in semiconductor devices" (Chinese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,601, issued on June 10, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Method and apparatus for power saving in semiconductor devices" was invented by Jian Luo (Wuhan, China) and Zhuqin Duan (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a clock gating circuit and a control circuit. The clock gating circuit outputs a gated clock signal based on a clock signal. Transitions of the clock signal are output in the gated clock signal in response to a clock enable signal having an enable value and are disabled from being output in the gated clock signal in response to the clock enable sig...