US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on June 10 for "Memory devices having vertical transistors and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,867, issued on June 10, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory devices having vertical transistors and methods for forming the same" was invented by Tao Yang (Wuhan, China), Dongxue Zhao (Wuhan, China), Yuancheng Yang (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a memory device includes a vertical transistor, a storage unit, and a bit line. The vertical transistor includes a semiconductor body extending in a first direction. The semiconductor body includes a doped source, a doped drain, and a channel portion. The st...