US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on June 10 for "Memory controller, memory device, memory system and operation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,026, issued on June 10, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Hubei, China).

"Memory controller, memory device, memory system and operation method thereof" was invented by Zhen Huang (Hubei, China), Kang Li (Hubei, China) and Zhe Zhang (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory controllers, memory devices, memory systems and operation methods are provided. A memory controller is to: find, in input data, a binary code to be replaced corresponding to a preset programming level to be replaced, the input data is to be written into a memory cell; and substitute the binary code to be replaced in the input data with...