US Patent Issued to Yangtze Memory Technologies on July 8 for "Three-dimensional memory device and fabrication method" (Chinese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,994, issued on July 8, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional memory device and fabrication method" was invented by Zhiyong Lu (Wuhan, China), Sheng Peng (Wuhan, China), Kai Yu (Wuhan, China), Wenbo Zhang (Wuhan, China), Yang Zhou (Wuhan, China) and Jing Gao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional (3D) NAND memory devices and methods are provided. In one aspect, a fabrication method includes forming a conductor/insulator stack over a substrate, forming a dielectric layer of a dielectric material including atomic hydrogen over a part of the conductor/insulator stac...