US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on July 8 for "Openings layout of three-dimensional memory device" (Chinese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,616, issued on July 8, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Openings layout of three-dimensional memory device" was invented by Jia He (Wuhan, China), Haihui Huang (Wuhan, China), Fandong Liu (Wuhan, China), Yaohua Yang (Wuhan, China), Peizhen Hong (Wuhan, China), Zhiliang Xia (Wuhan, China), Zongliang Huo (Wuhan, China), Yaobin Feng (Wuhan, China), Baoyou Chen (Wuhan, China) and Qingchen Cao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of semiconductor devices and methods for forming the semiconductor devices are disclosed. In an example, a method for forming device openings includes formi...