US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on July 8 for "Memory device and program operation thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,353,726, issued on July 8, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device and program operation thereof" was invented by Zhichao Du (Wuhan, China), Yu Wang (Wuhan, China), Haibo Li (Wuhan, China), Ke Jiang (Wuhan, China) and Ye Tian (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is disclosed. The memory device may include a memory string and a peripheral circuit. The memory string may include a drain select gate (DSG) transistor, a plurality of memory cells, and a source select gate (SSG) transistor. The peripheral circuit may be coupled to the memory string and configured to, during a pr...