US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on July 29 for "Semiconductor structure, fabrication method and three-dimensional memory" (Chinese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,307, issued on July 29, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Semiconductor structure, fabrication method and three-dimensional memory" was invented by Teng Huang (Wuhan, China), Ziqun Hua (Wuhan, China), Yanwei Shi (Wuhan, China) and Lan Yao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device. The semiconductor device includes a transistor in active area. The active area is in a substrate and comprises a recess, a surface of the recess having an offset from a surface of the substrate. The transistor comprises a gate electrode, the gate electrode comprisi...