US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on July 29 for "Bonded semiconductor devices having processor and static random-access memory and methods for forming the same" (Chinese Inventor)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,278, issued on July 29, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Bonded semiconductor devices having processor and static random-access memory and methods for forming the same" was invented by Jun Liu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an example, a semiconductor device includes a first semiconductor structure including a device layer, a first interconnect layer, and a first bonding layer. The device layer includes a processor and a logic circuit, and the first bonding layer includes a first bonding contact. The semiconductor device also includes a second semiconductor structure including an ...