US Patent Issued to Yangtze Memory Technologies on July 22 for "Three-dimensional memory devices having a support stack comprising a sacrificial dielectric layer, and fabricating methods thereof" (Chinese Inventor)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,317, issued on July 22, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional memory devices having a support stack comprising a sacrificial dielectric layer, and fabricating methods thereof" was invented by Kun Zhang (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a 3D memory device is provided. The method comprises forming an array wafer including a core array region, a staircase region, and a periphery region. Forming the array wafer includes forming an alternating dielectric stack on a first substrate, forming a plurality of channel structures in the alternating dielectric stack...