US Patent Issued to Yangtze Memory Technologies on July 22 for "Page buffer circuit with bit line select transistor" (Chinese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,367,936, issued on July 22, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Page buffer circuit with bit line select transistor" was invented by Teng Chen (Wuhan, China), Yan Wang (Wuhan, China), Jing Wei (Wuhan, China), Yang Zhang (Wuhan, China) and Kuriyama Masao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the disclosure provide a memory device. For example, the memory device can include a memory array, a bit line and a buffer. The memory array can include a plurality of memory strings. The memory strings can be divided into a first memory string group and a second memory string group. The bit line can...