US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on July 22 for "Non-destructive mode cache programming in NAND flash memory devices" (Chinese Inventor)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,367,941, issued on July 22, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Non-destructive mode cache programming in NAND flash memory devices" was invented by Jason Guo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes memory cells arranged in rows and columns, each memory cell configured to store n-bit of data, where n is a whole number larger than two, and a periphery circuit coupled to the memory cells and configured to program selected memory cells according to n logic pages of current programming data. The periphery circuit includes page buffers, and each page buffer includes latches. The ...