US Patent Issued to Yangtze Memory Technologies on July 15 for "Trench structures for three-dimensional memory devices" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,896, issued on July 15, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Trench structures for three-dimensional memory devices" was invented by Qiang Xu (Hubei, China), Zhiliang Xia (Hubei, China), Ping Yan (Hubei, China), Guangji Li (Hubei, China) and Zongliang Huo (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes method and structure of a three-dimensional memory device. The memory device includes a substrate and a plurality of wordlines extending along a first direction over the substrate. The first direction is along the x direction. The plurality of wordlines form a staircase str...