US Patent Issued to Yangtze Memory Technologies on July 15 for "3D NAND memory device with non-uniform channel structure and method for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,898, issued on July 15, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"3D NAND memory device with non-uniform channel structure and method for forming the same" was invented by LinChun Wu (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China) and ZongLiang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the disclosure provide a semiconductor device including a first die. The first die includes a first stack of layers including a semiconductor layer on a backside of the first die. A second stack of layers is formed that includes gate layers and first insulating layers alternatingly st...