US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on July 1 for "Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,351, issued on July 1, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same" was invented by Jianzhong Wu (Wuhan, China), Zongke Xu (Wuhan, China) and Jingjing Geng (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a three-dimensional (3D) memory device includes forming a dielectric stack including a plurality of first/second dielectric layer pairs over a substrate, forming a plurality of channel structures extending in a lateral direction in a core region of the dielectric stack, forming a staircase...