US Patent Issued to Yangtze Memory Technologies on July 1 for "Three dimensional (3D) memory device and fabrication method" (Chinese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,787, issued on July 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three dimensional (3D) memory device and fabrication method" was invented by Chuanhai Shan (Wuhan, China), Zhaosong Li (Wuhan, China), Zhouyang Lu (Wuhan, China), Jing Liu (Wuhan, China) and Jing Gao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional (3D) NAND memory devices and methods are provided. A fabrication method includes forming a semiconductor layer over a substrate, forming an opening that extends partially through the semiconductor layer, depositing a first stack layer and a second stack layer that are alternately stack...