US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on July 1 for "Method of programming multi-plane memory device" (Chinese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,501, issued on July 1, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Method of programming multi-plane memory device" was invented by Jialiang Deng (Wuhan, China) and Yu Wang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a plurality of planes. A method of programming the memory device includes applying a first program pulse to one or more memory cells of a first plane of the plurality of planes, verifying whether each one of the memory cells reaches a predetermined program state, and in response to a preset number of the memory cells in the first plane failing to reach the predetermined ...