US Patent Issued to Yangtze Memory Technologies on July 1 for "Method and structure for cutting dense line patterns using self-aligned double patterning" (Chinese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,684, issued on July 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Method and structure for cutting dense line patterns using self-aligned double patterning" was invented by Lu Ming Fan (Hubei, China), Zi Qun Hua (Hubei, China), Bi Feng Li (Hubei, China), Qingchen Cao (Hubei, China), Yaobin Feng (Hubei, China), Zhiliang Xia (Hubei, China) and Zongliang Huo (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure including forming a plurality of mandrel lines on a first dielectric layer and forming one or more groups of discontinuous mandrel line pairs with a first mask. The ...