US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on July 1 for "Memory devices having vertical transistors and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,341, issued on July 1, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory devices having vertical transistors and methods for forming the same" was invented by Wei Liu (Wuhan, China), Hongbin Zhu (Wuhan, China), Ziqun Hua (Wuhan, China), Ning Jiang (Wuhan, China) and Wenyu Hua (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a periphe...