US Patent Issued to Yangtze Memory Technologies on Jan. 28 for "Method for reading and writing memory cells in three-dimensional FeRAM" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,537, issued on Jan. 28, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Method for reading and writing memory cells in three-dimensional FeRAM" was invented by Qiang Tang (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of programming a ferroelectric memory device is disclosed. The method includes applying a first voltage to a first word line; applying a second voltage to the first word line; and applying a pass voltage to a second word line during a period of applying the first voltage to the first word line and during a period of applying the second voltage to the first word line. The pass voltage is betw...