US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Jan. 28 for "Memory device and program operation thereof" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,554, issued on Jan. 28, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device and program operation thereof" was invented by Kaijin Huang (Wuhan, China), Jin Lyu (Wuhan, China) and Gang Liu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, a system, and a method for operating the memory device are provided. The memory device includes a first memory string and a peripheral circuit. The first memory string includes a first drain, a first drain select gate (DSG) transistor, a first drain dummy transistor between the first drain and the first DSG transistor, and a plurality of first memory cells....