US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Jan. 28 for "Memory device, method for programming memory device, program verification method and memory system" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,564, issued on Jan. 28, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, method for programming memory device, program verification method and memory system" was invented by Xiaojiang Guo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, a method for programming the memory device, a program verification method, and a memory system are provided. In the program verification method, an ith verification result of an ith program verification operation is obtained, where programming states verified by the ith program verification operation range from an nth state to an (n+k)th state, i and n ...