US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Jan. 28 for "Double program debug method for NAND memory using self-verification by internal firmware" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,566, issued on Jan. 28, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Double program debug method for NAND memory using self-verification by internal firmware" was invented by Youxin He (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for programing flash memory devices. The method may include programming a selected page of the NAND flash memory device according to programming data. The selected page may include memory cells corresponding to a word line. The programming of the selected page may include programming operations with programming voltages applied on the word lin...