US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Jan. 27 for "Memory operating method, memory and memory system" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,061, issued on Jan. 27, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory operating method, memory and memory system" was invented by Li Xiang (Wuhan, China), Wei Huang (Wuhan, China), Ting Zhu (Wuhan, China) and Shuai Wang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one aspect of the present disclosure, a method of operating a memory is provided. The method may include applying a bias voltage to a bottom select line of a second memory block of the memory during a first time period to turn on the bottom select transistor of the second memory block. The memory may include a first memory block a...