US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Jan. 27 for "Memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,479, issued on Jan. 27, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory devices and methods for forming the same" was invented by Yanhong Wang (Wuhan, China), Wei Liu (Wuhan, China), Yaqin Liu (Wuhan, China), Shiqi Huang (Wuhan, China) and Liang Chen (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory array structure, a first peripheral circuit, and a second peripheral circuit. The memory array structure includes a vertical transistor having a first terminal and a second terminal, a storage unit having a first end coupled to the first terminal of the vertical transistor, and a b...