US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Jan. 20 for "Three-dimensional memory devices with channel structures having plum blossom shape" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,468, issued on Jan. 20, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices with channel structures having plum blossom shape" was invented by Tingting Gao (Wuhan, China), Lei Xue (Wuhan, China), Xiaoxin Liu (Wuhan, China) and Wanbo Geng (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate and a channel structure extending vertically above the substrate and having a plum blossom shape including a plurality of petals in a plan view. The ch...