US Patent Issued to Yangtze Memory Technologies on Jan. 20 for "Method of forming top select gate trenches" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,513, issued on Jan. 20, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Method of forming top select gate trenches" was invented by Hang Yin (Wuhan, China), Zhipeng Wu (Wuhan, China), Kai Han (Wuhan, China), Lu Zhang (Wuhan, China), Pan Wang (Wuhan, China), Xiangning Wang (Wuhan, China), Hui Zhang (Wuhan, China), Jingjing Geng (Wuhan, China) and Meng Xiao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the disclosure provide a method for fabricating a semiconductor device having an first stack of alternating insulating layers and sacrificial word line layers arranged over a substrate, the first stack inc...