US Patent Issued to Yangtze Memory Technologies on Jan. 20 for "Memory systems with parity data generated using latches in memory devices" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,530,132, issued on Jan. 20, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory systems with parity data generated using latches in memory devices" was invented by Biao Yang (Hubei, China), Suyi Liu (Hubei, China) and Lu Guo (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present disclosure provide a memory system and operating method thereof, and storage medium; wherein the memory system includes: a memory controller configured to send a first command, the first command including first data; and a memory device including a latch; the memory device coupled to the memory controller and configured to: ...