US Patent Issued to Yangtze Memory Technologies on Jan. 20 for "Memory device, operation method, and memory system" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,108, issued on Jan. 20, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Memory device, operation method, and memory system" was invented by Yong Fu (Wuhan, China), ShiYang Yang (Wuhan, China) and Ling Ding (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present application disclose a memory device, an operation method, and a memory system. The memory device includes: a bias generation circuit configured to generate a target bias signal according to a data transfer rate of the memory device, wherein the target bias signal varies with a preset data transfer rate range; and a clock buffer circuit coupl...