US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Jan. 13 for "Three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,293, issued on Jan. 13, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices and methods for forming the same" was invented by Yajun Huang (Wuhan, China), Chuan Yang (Wuhan, China), Qian Gao (Wuhan, China) and Xin Zhang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a three-dimensional (3D) memory device includes a stack structure including interleaved conductive layers and dielectric layers and having a core array region and a staircase region in a plan view, one or more channel structures each extending through the core array region of the stack structure, and one ...