US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Jan. 13 for "Three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,558, issued on Jan. 13, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices and methods for forming the same" was invented by Liang Chen (Wuhan, China), Wei Liu (Wuhan, China), Yanhong Wang (Wuhan, China), Zhiliang Xia (Wuhan, China), Wenxi Zhou (Wuhan, China), Kun Zhang (Wuhan, China), Yuancheng Yang (Wuhan, China) and Shiqi Huang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, a third semiconductor structure, a first bonding interface between the first...