ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,996, issued on Jan. 13, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).
"Three-dimensional memory devices" was invented by Kun Zhang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory device is disclosed. The 3D memory device includes a memory stack, a semiconductor layer above the memory stack, a plurality of channel structures each extending vertically through the memory stack, and a source contact above the memory stack and in contact with the semiconductor layer. A semiconductor plug, in contact ...