US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Jan. 13 for "Three-dimensional memory device and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,999, issued on Jan. 13, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory device and fabrication method thereof" was invented by Zhong Zhang (Wuhan, China), Wenxi Zhou (Wuhan, China) and Zhiliang Xia (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one aspect, a three-dimensional (3D) memory device includes a first core region, a second core region, and an isolation region between the first and second core regions along a first direction, a stack in the first and second core regions and including alternatingly stacked first dielectric layers and conductor layers, gate line slit structures e...