US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Jan. 13 for "Memory device and memory system for performing resistor offset calibration training" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,276, issued on Jan. 13, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device and memory system for performing resistor offset calibration training" was invented by Zhefan Li (Wuhan, China), Huangpeng Zhang (Wuhan, China) and Jiahao Chen (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one aspect of the present disclosure, a peripheral circuit is provided. The peripheral circuit may include a DQ circuit comprising a plurality of decision feedback equalization (DFE) components. The peripheral circuit may include a resistor offset calibration (RXOC) circuit. The RXOC circuit may include an oscilla...