US Patent Issued to Yangtze Memory Technologies on Jan. 13 for "Memory device, memory system and operation method thereof, and electronic apparatus" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,524,164, issued on Jan. 13, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Memory device, memory system and operation method thereof, and electronic apparatus" was invented by WenWen Dong (Wuhan, China), Yahai Liu (Wuhan, China), Lu Guo (Wuhan, China), Wei Huang (Wuhan, China) and Weijun Wan (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory device and an operation method thereof, a memory system and an operation method thereof, and an electronic apparatus. The memory device includes a memory array and a peripheral circuit coupled with the memory array; the peripheral circuit is c...