US Patent Issued to Yangtze Memory Technologies on Feb. 3 for "Three-dimensional memory devices and fabricating methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,310, issued on Feb. 3, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional memory devices and fabricating methods thereof" was invented by Kun Zhang (Hubei, China), Wenxi Zhou (Hubei, China), Zhiliang Xia (Hubei, China) and Zongliang Huo (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of three-dimensional (3D) memory devices and fabricating methods thereof are disclosed. A disclosed 3D memory device can comprise an alternating conductive/dielectric stack on a substrate, a plurality of channel structures in the alternating conductive/dielectric stack, and a plurality of gate line slit (GLS) ...