US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Feb. 3 for "Semiconductor device including reduced-size transistors, manufacturing method thereof, and NAND memory device" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,319, issued on Feb. 3, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Semiconductor device including reduced-size transistors, manufacturing method thereof, and NAND memory device" was invented by Lan Yao (Wuhan, China), Ziqun Hua (Wuhan, China) and Yanwei Shi (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, a manufacturing method thereof and a NAND memory device are disclosed. The method comprises forming a substrate including an active region and an isolation region located around the active region. The active region includes a source region, a channel region, and a drain region. The method...