US Patent Issued to Yangtze Memory Technologies on Feb. 3 for "Method and device for determining coordinates of contact through-holes in memory device" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,541,839, issued on Feb. 3, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Method and device for determining coordinates of contact through-holes in memory device" was invented by Wenqi Wang (Wuhan, China), Guangdian Chen (Wuhan, China), Jinxing Chen (Wuhan, China), Yanli Wang (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of determining coordinates of contact through-holes (CTs) in a memory device includes: obtaining a bright voltage contrast (BVC) image including a plurality of CTs in the memory device; converting color components in the BVC image into grayscale values to obt...