US Patent Issued to Yangtze Memory Technologies on Feb. 3 for "Memory device with word lines and contact landing" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,316, issued on Feb. 3, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Memory device with word lines and contact landing" was invented by Zhong Zhang (Wuhan, China), Di Wang (Wuhan, China) and Wenxi Zhou (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of memory device fabrication includes, providing a structure that includes first layers including word lines interleaved respectively with first dielectric layers, second layers including second dielectric layers interleaved respectively with the first dielectric layers, wherein the second layers are adjacent to the first layers, forming vertical recesses each...