US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Feb. 3 for "Memory device, operation method thereof, memory system, and memory controller" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,541,304, issued on Feb. 3, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, operation method thereof, memory system, and memory controller" was invented by Xingwei Tang (Wuhan, China), Guangchang Ye (Wuhan, China), Wen Luo (Wuhan, China), Chaofan Xie (Wuhan, China), Yufei Feng (Wuhan, China) and Cheng Han (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one aspect of the present disclosure, a memory device is provided. The memory device may include a memory cell array including a plurality of memory cells. A preset number of the memory cells may form a code word. The memory device may include a...