US Patent Issued to Yangtze Memory Technologies on Feb. 3 for "Memory and operating method thereof, memory system, computer-readable storage medium" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,541,452, issued on Feb. 3, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Memory and operating method thereof, memory system, computer-readable storage medium" was invented by Yonggang Chen (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory includes an array of memory cells and a peripheral circuit. A memory cell is configured to store N bits of data, and a plurality of memory cells has 2N data states. The peripheral circuit is configured to: read the array of memory cells with a first read voltage and determine a first number of memory cells with a threshold voltage greater than the first read voltage that is gr...