ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,232,320, issued on Feb. 18, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).
"Word line structure of three-dimensional memory device" was invented by Qiang Xu (Wuhan, China), Fandong Liu (Wuhan, China), Zongliang Huo (Wuhan, China), Zhiliang Xia (Wuhan, China), Yaohua Yang (Wuhan, China), Peizhen Hong (Wuhan, China), Wenyu Hua (Wuhan, China) and Jia He (Wuhan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a substrate, a stack over the substrate, and a gate line slit extending along a first direction and dividing the stack into two portions. The stack includes a connection portion that connects the two ...