US Patent Issued to Yangtze Memory Technologies on Feb. 17 for "Architecture and method for NAND memory operation" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,555,642, issued on Feb. 17, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Architecture and method for NAND memory operation" was invented by Changhyun Lee (Wuhan, China), Xiangnan Zhao (Wuhan, China) and Haibo Li (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An example memory device includes a first memory cell string, word lines and processing circuitry. The processing circuitry is configured to apply a first verify bias voltage on a selected word line and apply a first bias voltage on a first word line in a pre-verify stage. The processing circuitry is further configured to apply a second verify voltage on the se...